Thermal Transport in Ultra-Wide Bandgap Semiconductors
Abstract
Today s transistors could run much faster if not limited by heat dissipation. Ultra-wide bandgap (UWBG) electronics, driven at signi,ficantly greater power densities and higher frequencies than their narrower-gap cousins, will confront even more severe thermal limi,tations. The adverse temperature rise not only affects efficiency and reliability but can also lead to the catastrophic failure of t,he devices. A solid grasp of thermal transport in UWBG semiconductors is imperative to design effective heat dissipation pathways an,d accurately predict the local temperature rise to manage the thermal stress. The objective of this project is to fundamentally unde,rstand thermal phonon transport in UWBG semiconductors under operating conditions high E-field and with real sample consideratio,ns interface and point defects. The goal is to enable the design of more efficient and power-dense electrics with sufficient heat, dissipation and minimized thermal stress. We will use a combination of ab initio modeling and optical experiments in this project., More specifically, we will carry out laser- and synchrotron-based measurements under E-field, as well as density functional theory, and non-equilibrium Greens function calculations, taking into account the non-equilibrium transport. The proposed work on thermal, transport in UWBG semiconductors will offer the essential knowledge to guide the design of more efficient, power-dense, and cost-ef,fective UWBG transistors. This will allow for advanced power electronics in American ships, aircraft, and bases, leading to increase,d and sustained warfighting performance for the U.S. Navy and U.S. Marine Corps and, more broadly, the U.S. Armed Forces.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 08, 2022
- Source ID
- N000142212357
Entities
People
- Zhiting Tian
Organizations
- Cornell University
- Office of Naval Research
- United States Navy