N-Polar GaN CAVETs for higher power densities at mm-wave operations
Abstract
ABSTRACT: The very design of a CAVETs in GaN combines the best of two worlds: 1) 2D-Electron Gas (2DEG) to offer high current densit,y 2) a buried p-n junction to block the voltage, with high breakdown electric field. CAVETs have demonstrated dispersion-less output, characteristics, and currently being studied for its potential to increase the power density >30W/mm at 4GHz without use of any fie,ld plates. Vertical device technology is promising for high power density electronics. Over the last 10 years several landmarks have, been achieved in power switching performances. However, not enough research has been focused on RF performance where vertical devic,es can lead to enhancement of dispersion-less voltage swing and therefore more dispersion-less Watts-per-square mm. It is well under,stood now that dispersion due to surface nonidealities can be mitigated in vertical devices since the maximum electric field is buri,ed within the device (a low trap density region) and not at the surface (a high trap density region). The PI and her team have an ex,cellent track record on vertical GaN transistors particularly CAVETs. In this program the WBG lab at Stanford will be pushing the bo,undaries of GaN to offer more power densities at mm-wave for RF applications, while adding to the overall power added efficiencyAppr,oved for Public Release.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 13, 2022
- Source ID
- N000142212512
Entities
People
- Srabanti Chowdhury
Organizations
- Office of Naval Research
- Stanford University
- United States Navy