GaN ferroelectgric high electron mobility transistor (FE-HEMT)
Abstract
As part of this seed program, we propose to develop the growth space for Ga-polar Sc(Al,Ga)N by MOCVD. Additionally, the full parame,ter space for growth of Ga-polar and N-polar Sc(Al,Ga)N will be established by MBE. The ferroelectricity of MBE-grown Sc(Al,Ga)N fil,ms with different thicknesses will be also investigated.Approved for Public Release
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 03, 2022
- Source ID
- N000142212727
Entities
People
- Elaheh Ahmadi
Organizations
- Board of Regents of the University of Michigan
- Office of Naval Research
- United States Navy