SiGeSnPb Semiconductor Fab for Room Temp Electro-Optic Infrared (IR) Sensors
Abstract
Abstract (Approved for Public Release):This project is to deliver breakthroughs in semiconductor science and technology for the fabr,ication of novel high temperature high quality infrared (IR) focal-plane arrays (FPAs) on Si operating in the short and mid-range IR, optical spectral region. This is being accomplished at the University of Arkansas (UA) in collaboration with CRANE Navy which began, in year one of a 3-phase, 5 year, project with a goal to develop a SiGeSn Semiconductor Fab and FPA digital imaging technology. Thi,s is being accomplished through: Task 1, equipment design, development, and acquisition; Task 2, growth and characterization of thin,Ge and GeSn photodetectors; Task 6, explore advanced device architectures by leveraging material development; Task 7, development of, a SiGeSn(Pb) Material Foundry; and Task 8, sustainability and economic development. Tandem to these tasks we will Prepare the Next,Generation Workforce capable to lead at the development of semiconductor technology. The outcome will enable the naval warfighter to, see better at night and allow them to store and share captured images wirelessly with other warfighters, at a different location, s,hip, or aircraft, obtaing a decision making advantage, national needs, including microwave photonics and autonomous vehicles.Research in the first two years of the project are squarely f,ocused on preparing high quality SiGeSn semiconductor material for use as prototype IR detectors. This proposal details the research, progress made in year 1, while describing the research strategy and plans for year two to realize this goal. Year one has seen the,development of a new CVD tool, new MBE technology, and corresponding approaches for growth that will enhance the quality of SiGeSn m,aterial to advance the state-of-the-art of IR imaging and at lower cost. The new growth systems will enhance the UA capability and i,ts role as a National Fabrication Facility for GeSn, SiGeSn, and SiGeSnPb semiconductor structures and devices. The Fab will provide, greater opportunity to all US researchers, on developing the material science of group IV semiconductors. The team has also modelle,d and evaluated the potential of SiGeSn as a FPA, identified some key parameters needed to make accurate predictions related to appl,ications, such as LIDAR for ground and air autonomous vehicles. This progress was made while training 9 students as the next generat,ion of semiconductor researchers - 3 underrepresented students and 3 who graduated.Year 2 will continue progress on the 5-year, 3-ph,ase vision to enhance the ingenuity, capability, and overall competitiveness of researchers at the UA and CRANE to develop new and n,ovel high temperature FPA digital imaging systems. Moreover, research in year two will completePhase 1, which puts in place the infr,astructure needed in years 3 to 5 when the SiGeSnPb Semiconductor Research Fab will go beyond impacting UA and Navy researchers by f, who are supporting DoD missions. To make progress on our objectives in year 2, the UA-CRANE team will continue to work on the each,task established during year 1 as part of an overall Phase 1 plan devoted to designing, acquiring, and installing new and novel CVD,and MBE epitaxial growth techniques and facilities, capable of fabrication of high quality of Ge ART structures and comparison with,previous work. Implementing the new CVD and MBE tools is key in year 2 to demonstrate enhance quality Ge and GeSn material on Si usi,ng aspect ratio trapping as the first step in demonstrating the potential for SiGeSn for to advance IR imaging and at lower cost.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 04, 2022
- Source ID
- N000142312008
Entities
People
- Shui-Qing Yu
Organizations
- Office of Naval Research
- United States Navy
- University of Arkansas System