Monolayer 2D Oxyhalide Thin Film Growth as Gate Dielectric Insulator for Transition Metal Dichalcoge
Abstract
Project Abstract (Approved for Public Release):With ever reducing channel length and thickness in the electronics industry, two-dime,nsional (2D)transition metal dichalcogenide (TMD) materials are very appealing for future electronics eitheroutperforming or complem,enting silicon technology. While rapid and significant progress on 2DTMDtransistors has been achieved in the lab scale, the prospect,s of 2D nanoelectronics in beyondsilicontechnology in the semiconductor industry is still under debate. The biggest challenge is tha,tmechanical exfoliation, currently the bread and butter of 2D-TMD research, will never besufficiently reliable for an integrated cir,cuit with millions or billions of devices. Studies towardshigh-quality and low-defect density monolayer grown TMD have been undertak,en and areunderway. Gate dielectrics to use for these vdW materials, on the other hand, has not receivedmuch attention until recentl,y.The proposed project focus on the experimental efforts to grow a series of large-area and highqualitymonolayer two-dimensional (2D,) oxyhalide thin films as gate dielectric insulator tofacilitate technological feasibility of 2D transition metal dichalcogenide (TM,D) materials formodern nanoelectronics. We will focus on batch-compatible growth and deposition methods withlow deposition temperatu,re and minimum defect density for high performance and low poweroperation of 2D field effect transistors (FETs). We shall also fabri,cate different monolayeroxyhalide/TMD channel FET devices, to investigate interface quality, possible integration issues,dielectric,properties such as breakdown field and leakage current, and test the overall performanceof these FET devices.The proposed work will,make a significant technological impact to demonstrate monolayeroxychlorides and oxybromides film growth for applications as layered, dielectrics on 2D deviceswith superior FET performance for future computing technology. The transformative technologiesdeveloped in, the proposal are expected to significantly advance beyond-silicon nanoscale2Delectronic materials, computing devices and technologi,es in the Navy, and thus meet mission ofOffice of Naval Research (ONR) Nanoelectronics Program. The project will actively involvesun,dergraduate training, extensive science education and outreach programs to enhance interest ofK-12 students and the general public i,n science as well.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 04, 2022
- Source ID
- N000142312020
Entities
People
- Bing Lv
Organizations
- Office of Naval Research
- United States Navy
- University of Texas at Dallas