Defects, noise, and coupled ionic-electronic transport in neuromorphic devices
Abstract
Analog computing based on emerging devices is believed to have substantially higher power efficiency than the digital counterparts b,uilt with purely silicon transistors. Although successfully demonstrated in proof-of-concept computing applications, understanding t,he fundamental device physics is still incomplete. We propose basic research on the defects, noise, and transport by comparing the o,peration of transition metal oxide and halide perovskite devices. We aim to understand the influence of mixed ionic-electronic trans,port on switching behavior, noise, and ultimate limits to computing capacity. The research will fundamentally impact resistance swit,ching devices and applications in future low-power nanoelectronics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 04, 2022
- Source ID
- N000142312021
Entities
People
- Qiangfei Xia
Organizations
- Office of Naval Research
- United States Navy
- University of Massachusetts