Improved mm-Wave Deep Recess Nitrogen-polar GaN HEMTs Through Channel Engineering
Abstract
PUBLICLY RELEASABLE Abstract:Performance of deep recess Nitrogen-polar GaN HEMTs at mm-wave frequencies will be improved through novel gate structures. Different gate topologies will be explored and their large-signal RF performance will be characterized. Channelstructure will be optimized to enhance the efficiency of the deep recess Nitrogen-polar GaN HEMT.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2023
- Source ID
- N000142312152
Entities
People
- Umesh Mishra
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara