Enhancement-mode Gallium Nitride transistors for next generation of mobile platforms
Abstract
It is clear that the next generations of DoD platforms will continue to operate at higherfrequencies, demanding higher gain and efficiency. E-mode devices are preferred in mobileplatforms where: space is constrained, the system has to operate from a single battery and needs to be highly efficient. This is highly probable in any handheld communication device (such as a cell phone or a wirelesscommunication device for a Marine) or a very compact unmanned vehicle such as a drone. Furthermore, simple logic using Enhancement/Depletion (E/D) mode architectures can be incorporated near the primary device, be it a power conversion device or a transmitter providing a simple active matching network. Particularly, in communication devices where a #radio# on chip is preferred, E-mode deviceshave to provide all the functions in an integrated fashion: power amplifiers, low noise amplifiers and switches. This proposal aimsto develop E-mode N-polar GaN HEMTs by applying innovative modifications tothe gate module including (i) Deep recessed structure (ii) Regrown gate region (iii) Insulated gate via high-k dielectrics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2023
- Source ID
- N000142312215
Entities
People
- Elaheh Ahmadi
Organizations
- Board of Regents of the University of Michigan
- Office of Naval Research
- United States Navy