Short-channel effects, deep levels and reliability physics in scaled submicrometer-gate Ga-polar and N-polar GaN HEMTs
Abstract
The aim of this proposal is to carry out a systematic study of short-channel effects, deep levels effects and reliability physics in scaled submicrometer-gate Ga-polar and N-polar GaN HEMTs. The specific research topics are: (i) in Ga-polar GaN HEMT we will study short-channel effects and deep levels in devices adopting different solutions for charge confinement and reduction of short-channel effects. In particular we will compare devices adopting Fe and C co-doping, possibly coupled with AlGaN backbarriers, and with different barrier materials, including AlN, InAl(Ga)N, ScAlN. Focus will be on advanced techniques for deep levels characterization, onthe effects of scaling, hot electron phenomena and degradation. (ii) in N-polar GaN HEMTs, we will carry out a detailed comparison of on-wafer reliability results of N-polar devices with Ga-polar devices; we will study deep level effects by means of new current transient spectroscopy techniques and develop device-level and circuit-level models of trapping effects. We will study the effect of different gate-drain distance on deep level effects, hot-electron effects and breakdown, also as a function of temperature. We will evaluate the #on-wafer# reliability of state of the art N-polar MISHEMTs, of MISHEMTs test structures for technology transfer, of commercial-level N-polar power MISHEMTs. We will carry out a preliminary long-term evaluation of the reliability of industrial-level N-polar GaN MISHEMTs, based on packaged pre-matched single-stage amplifiers, if available.The study will be based on detailed DC, pulsed and RF on-wafer characterization and testing, carried out at various bias points in on- off- and semi-on operation, with the aim of identifying the role of temperature, electric field, hot carriers, in determining limits to device performance and reliability. The effect of deep levels will be studied and modeled by means of recently developed spectroscopic analysis techniques enabling an accurate modeling of trapping effects.Accelerated testing will be coupled with physical failure analysis, based on electroluminescence, photoluminescence, photocurrent and other microscopy and spectroscopy techniques.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 15, 2023
- Source ID
- N000142312479
Entities
People
- E. Zanoni
Organizations
- Office of Naval Research
- United States Navy
- University of Padua