Exploring Extreme Nanoscale Doping in 2D Heterostructures
Abstract
Modulation doping produced extreme carrier mobilities for fast/high power electronics, efficient optoelectronics, qubits, quantum simulators, the fractional quantum Hall effect and topological superconductivity. The PI discovered 2D modulation doping using the deep work function and electronic state of #-RuCl3 to hole-dope other materials. Recently the PI found this can lead to extreme dopinglevels comparable to those achieved with ionic liquids. To this end the PI proposes to explore the origin of this behavior towards ushering in a new era of nanoscale modulation doping. This will involve a systematic approach to fabrication, spectroscopy and localprobes to uncover the origin.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 15, 2023
- Source ID
- N000142312539
Entities
People
- Kennth Burch
Organizations
- Boston College
- Office of Naval Research
- United States Navy