Reliability Evaluation of Vertical GaN Power Devices
Abstract
Reliability Evaluation of Vertical GaN Power DevicesJoseph B. Bernstein, Ariel University, Israeljosephbe@ariel.ac.ilAbstract:The goal of this study will be to characterize the potential failure mechanisms found in the deviceswhile interacting with the manufacturer to provide feedback about their process and the reliabilityimplications. The following issues will be addressed:# Physics of Failure of MOCVD grown vertical GaN power switches including the fundamentalthermodynamic mechanisms of defect formation and material degradation over a wide range oftemperatures (-70°C to 350°C) with in-situ monitoring during dynamic Voltage and Current stress.# Separation of mechanisms using the MTOL matrix approach for characterizing the stressors over thefull voltage and current range of the device. This is accomplished using our unique Boost-converterconfiguration with high-speed gate drive to allow high efficiency switching pushing both voltage andcurrent limits in the same dynamic test.# Model the dynamic behavior of each mechanism with a failure rate model based on the time-resolveddata. Each mechanism will be characterized by its thermal activation and by Voltage/Current/Frequency stresses by mechanisms separation. We will separate Gate voltage stressors versus Drain Voltage and Current stress and compare DC versus dynamic stress testing.# We will develop practical lifetime models of each of the mechanisms based on the time resolved dataand the specific stressor conditions leading to the degradation and lifetime prediction.# Provide continuous feedback to the supplier and understand how process changes affect the lifetimeand degradation parameters for material improvement and process modification.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 24, 2023
- Source ID
- N000142312617
Entities
People
- Joseph Bernstein
Organizations
- Ariel University
- Office of Naval Research
- United States Navy