Development of GaN High Voltage Vertical Power Devices

Abstract

Power electronics technologies enable military systems to be more efficient in terms of system size, weight, and power consumption (SWaP). Advancement in power electronics promises enormous energy efficiency gain. Wide band gap gallium nitride (GaN) (Eg ~ 3.4 eV)with intrinsic breakdown field Ebr~ 3.5 MV/cm and high electron mobility (phonon limited mobility >2000 cm2/Vs) possesses Baliga figure-of-merit (FOM) at least 5X better than SiC and almost 1000X better than Si, and can enable significant reduction in conduction and switching losses for power electronics.While significant research has been done on lateral power switching transistors, with significant industry participation, vertical GaN devices are at a relatively less mature stage. Vertical devices are particularly well-suited for high current and high voltage applications since they offer better scalability, and are less susceptible to dynamic on-resistance degradation and reliability issues caused by surface or interface states. The recent demonstration of vertical GaN devices with true avalanche breakdown shows the potential of these devices for future power electronics applications. However, the key challenge to achieve high power operation for GaN vertical device is to simultaneously realize precise doping control with low backgrounddoping of 1-2x105 cm-3, high growth rate, and smooth surface morphology.In this project, we will focus on (1) the development of MOCVD GaN thick drift layer with controllable low doping; and (2) device fabrication of vertical GaN PiN diodes targeting for 10 kV and above. Fabricated devices will be sent to NRL (Dr. Travis Anderson#s group) for further characterization. Part of the materials and fabricated devices will be used to support NSWC Crane employee, Miranda Carver#s PhD program under Prof. Steven Ringel#s supervision.

Document Details

Document Type
DoD Grant Award
Publication Date
Jul 24, 2023
Source ID
N000142312640

Entities

People

  • Hongping Zhao

Organizations

  • Office of Naval Research
  • Ohio State University
  • United States Navy

Tags

Readers

  • Distributed Systems and Data Platform Development
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics