Cathodoluminescence Experiments to Characterize Wide-Bandgap Semiconductors, Hybrid Films, and Composites
Abstract
The requested support will be used to enhance the fundamental and practical understanding of properties of wide-bandgap semiconductors, hybrid films, and various composites. Specifically, the requested funds will be used to purchase and install a Primary cathodoluminescence Instrument: A Gatan Monarc Pro450 cathodoluminescence (CL) system (Cost $284,962) with an Option 1: Gatan C1001 low-temperature (300K to 77K) stage (Cost $36,774) and an Option 2: Gatan near-infrared spectrometer (Cost $90,000) and an Option 3: Gatan IR Switch (Cost $3,200). This system will provide unique nanoscale characterization of a wide range of materials and devices related to ONR- and DoD-supporting technologies. The Gatan Monarc Pro CL system will be installed on an existing scanning electron microscope (SEM) in the 190,000 sq. ft. Georgia Institute of Technology Marcus Nanotechnology Building that houses the GT Institute for Electronics and Nanotechnology (IEN) and the GT Materials Characterization Facility (MCF) [https://research.gatech.edu/nano]. This multi-user semiconductor/biomaterials processing and nanoscale characterization facility is unique in the Southeastern USA. Currently, there are well over ~700 unique usersfrom more than 150 principal investigator groups from many academic, private, and government lab organizations in the USA using theMCF#s facilities per year. Many of these users are working on projects funded by the US DoD. The Gatan Monarc 450 Pro CL system will provide new capabilities to many of these users that will open up many new opportunities to develop a precise and nanoscale-level understanding of a wide range of different materials and devices related to current and future ONR needs. Specific example applications of this CL system discussed in this proposal are characterization of wide-bandgap (~3.7eV) III-N compound semiconductor materials being developed for 369.5nm narrow-linewidth laser diode applications. Such UV devices are currently under active development and this CL system will allow us to explore the details of this complex and strained multiple-quantum-well (MQW) heterostructure andoptimize individual layer properties for these III-N laser diodes. In addition to this device-related wide-bandgap materials research, more fundamental wide-bandgap semiconductor studies will be made possible using this new CL capability at Georgia Institute of Technology. Further research into the properties of the wider-bandgap wurtzite semiconductor AlN, having a direct energy gap ~6.2eVat 300K, will be undertaken. Doped n-type and p-type AlN films have been grown by metal-modulated molecular-beam epitaxy (MBE). Currently, p-n junctions have been demonstrated in this material and further study is required to understand the electronic properties of these ultra-wide-bandgap semiconductor devices. This Gatan Monarc Pro CL system will support additional studies of materials being developed at Georgia Institute of Technology for III-V compound semiconductor quantum-dot lasers for use in silicon photonic systems as well as aid in the development of hybrid films and composites containing additional materials beyond the III-N compound semiconductors. The low temperature attachment and near-infrared spectrometer will be especially useful for identifying material combinations that give rise to electro-optical-magnetic CL transitions not available at standard rf frequencies and temperatures. It is anticipated that recent discoveries in 2D-materials and high temperature superconductors will also benefit from this proposed facility. The projects described here are only a small sampling of the many research projects that will benefit from this new facility. The proposed Gatan Monarc Pro 450
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 11, 2023
- Source ID
- N000142312770
Entities
People
- Russell D. Dupuis
Organizations
- Georgia Tech Research Corporation
- Office of Naval Research
- United States Navy