Enhancement-mode Gallium Nitride transistors for next generation of mobile Platforms
Abstract
It is clear that the next generations of DoD platforms will continue to operate at higher frequencies,demanding higher gain and efficiency. E-mode devices are preferred in mobile platforms where:space is constrained, the system has to operate from a single battery and needs to be highlyefficient. This is highly probable in any handheld communication device (such as a cell phone ora wireless communication device for a Marine) or a very compact unmanned vehicle such as adrone. Furthermore, simple logic using Enhancement/Depletion (E/D) mode architectures can beincorporated near the primary device, be it a power conversion device or a transmitter providing asimple active matching network. Particularly, in communication devices where a #radio# on chipis preferred, E-mode devices have to provide all the functions in an integrated fashion: poweramplifiers, low noise amplifiers and switches. This proposal aims to develop E-mode N-polar GaNHEMTs by applying innovative modifications to the gate module including (i) Deep recessedstructure (ii) Regrown gate region (iii) Insulated gate via high-k dielectrics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 11, 2023
- Source ID
- N000142312807
Entities
People
- Elaheh Ahmadi
Organizations
- Office of Naval Research
- United States Navy
- University of California, Los Angeles