SiGeSnPb Semiconductor Fab for Room Temp Electro-Optic Infrared (IR) Sensors - Phase 2
Abstract
The gap between U.S. night vision technology and that of the rest of the world has narrowedconsiderably. Of course, this has profound consequences since the erosion of the tactical advantageof night operations to the soldier, aircraft, missiles, drones, robotics of any type, is a key factor indetermining the outcome of conflict. Even more, to see at night, is not just a National Securityissue, but potentially an even larger economic one. Self-driving vehicles for the civilian, roboticsfor the factory and warehouse, surveillance for the home and business, and potential future needsto see at night, all project a tremendous market and potentially daunting demand for enhancing#the ability to see at night#. We need to bring innovative ideas and step-up our commitment andinvestment to developing night vision technology to regain the potential tactical and economicadvantage for our nation.In response, asserting American leadership in night vision technology is underway at theUniversity of Arkansas (UA). More specifically, to secure United States (U.S.) leadership in nextgeneration night vision technology the University of Arkansas (UA) mission is to establish,operate, and sustain a National Center on #Research to Accelerate Commercialization andEducation for SiGeSn#, hereafter known as the #RACE# for SiGeSn technology. SiGeSn alloysare a new family of semiconductors with clear potential to advance infrared imaging, electronics,and photonics. RACE is a 3-Phase, 5-year project, targeted on the challenge and the race to leadthe competition around the world on developing the next generation of infrared (IR) technology atlower cost. More than that, the Center will provide national access to SiGeSn semiconductorgrowth and prototyping facilities that will enhance breakthroughs and their transition intocommercial triumphs.Researchin Phase 1 of the project was squarely focused on preparing high quality, high Sncontent GeSn semiconductor material for use as prototype IR detectors.This proposal details theresearch progress made in Phase1, while describing the research strategy and plans for Phase 2 toAccelerate Commercialization and Education for SiGeSn and IR new and innovative technology.In Phase 1, we have demonstrated defect free growth of Ge on silicon and for the first time GeSnon silicon with 2% Sn composition. Phase 2 will utilize the progress to fabricate defect free GeSnwith higher Sn content as preparation for GeSn prototype IR sensors.At the same time, we have developed, purchased, and now have a new chemical vapordeposition (CVD) tool and corresponding approach for growth from 300oC and higher. Likewise,we have developed, purchased, and now have a new molecular beam epitaxy (MBE) technologyas a growth tool that will allow controlled growth of GeSn and SiGeSn at low temperatures of50oC to 300oC. As a result of this flexibility and advances made on CVD and MBE growth andprocessing of SiGeSn, we have enhanced the University of Arkansas capability and role as aNational Fabrication Facility for GeSn, SiGeSn, and SiGeSnPb novel semiconductor structuresand devices. This progress was made while training 9 students as the next generation ofsemiconductor researchers - 3 underrepresented students and 3 who graduated.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Oct 13, 2023
- Source ID
- N000142312872
Entities
People
- Shui-Qing Yu
Organizations
- Office of Naval Research
- United States Navy
- University of Arkansas System