ScAlN-gated GaN high electron mobility transistor
Abstract
Project AbstractScAlN-gated GaN high electron mobility transistorsAs part of this program, we propose to develop the growth space for Ga-polar and N-polar ScAlN by molecular beam epitaxy and metalorganic chemical vapor deposition. The impact of growth conditions and strain on ferroelectricity of ScAlN will be investigated. ScAlN-gated GaN high electron mobility transistors will be fabricated and characterized.Approved for Public Release
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Oct 13, 2023
- Source ID
- N000142312880
Entities
People
- Elaheh Ahmadi
Organizations
- Office of Naval Research
- United States Navy
- University of California, Los Angeles