High-mobility ferroelectric semiconductors for novel applications (experiment)
Abstract
Ferroelectrics, which exhibit spontaneous up or down polarizations as a response to an external electric field or strain, show great potential as the active component of future electronics technologies. Recent discoveries of non-conventional ferroelectric materials with multifunctional properties have opened a pathway to design new classes of electronic devices with enhanced performance and functionalities. In particular, ferroelectrics with metallic or semiconducting properties enable the use of ferroelectrics beyond application as gate dielectrics in field-effect transistors (FETs), including as an active conducting channel for next generation FETs.The realization of practical ferroelectric semiconductor-based electronic devices requires further improvement of carrier mobility through the development of novel ferroelectric materials. In this project, we will develop novel "high mobility" ferroelectric semiconductors in the ferroelectric material itself to improve the on/off ratio, low-power operation, and device speed characteristics. We will identify novel high-mobility ferroelectrics and optimize their properties through an exploration of elemental composition, the manipulation of crystal structure through constraints at surfaces and interfaces, strain, and stoichiometry. (The abstract is approved for public release)
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Dec 15, 2023
- Source ID
- N000142412069
Entities
People
- Charles Ahn
Organizations
- Office of Naval Research
- United States Navy
- Yale University