DURIP High-Voltage Deep Level Transient Spectrometer for Defect Characterization in Power Diodes
Abstract
A 12-month equipment grant is proposed to develop and employ the first-ever (as far as we are aware) high-voltage deep-level transient spectroscopy (DLTS) system for quantifying trap concentrations in a wide range of next-generation wide- and ultra-wide bandgap power diodes (WBG/UWBG), for which the conventional DLTS analysis is currently inadequate. This will enable quicker optimization of next-generation power diodes and allow adoption of these for the all-electric Navy and other DoD initiatives. High-voltage DLTS is proposed as a powerful and worthy technique for the characterization of power diodes that are essential components in power applications such as converters and electronic circuits, where their reliability and performance are critical. The proposed system will be capable of applying voltages up to 2 kV compared to conventional DLTS systems that are limited to ~10 V. While conventional DLTS provides trap spectra, we show that this may or may not be applicable at high voltages due to the dramatic changes in depletion depth andelectric field magnitude and different transport and other phenomena dominating at the 10X or higher electric fields. The proposedsystem would investigate power diodes under realistic operating conditions to better understand the trapping behavior at the same high-electric fields/voltages the devices would see under standard operation. The primary benefits of high-voltage DLTS would be to isolate and identify the leakage and breakdown mechanisms that result in degradation, premature breakdown, dynamic on-resistance, etc. in power diodes. This one-of-a-kind system will provide unique workforce development opportunities, new collaborations with national and DoD labs, and the unique characterization opportunities described. In brief, by enabling the characterization and analysis of traps at the normal operating conditions of next generation WBG and UWBG power diodes (i.e. under high reverse voltages), the proposed system can contribute to the development of reliable and efficient power diodes for numerous power electronics applications.Approved for Public Release.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 15, 2024
- Source ID
- N000142412255
Entities
People
- Aaron R. Arehart
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy