SiGeSn Semiconductor Fab for Room Temp Electro-Optic Infrared (IR) Sensors-Phase 3a
Abstract
Seeing in the dark with high special resolution is essential for our national defense. To keep our night vision superior there is need to develop new higher temperature infrared (IR) focal-plane array imaging technology for long-range intelligence, surveillance, reconnaissance, tracking, communication, situational awareness for night-time engagement and navigation, as well as missile and airborne vehicle guidance and defense systems. HgCdTe is the high-performance IR material currently used today but high sensor cost and cryogenic cooling limits both reliability and affordability. In comparison, SiGeSn has the ability to #see and to track# quickly, day or night, with ultra-high resolution but at low cost. This potentially extends the tactical advantage of night operations to the individual soldier and is a key factor in determining the outcome in conflict. Recognizing the exciting opportunity to make a huge difference in U.S. leadership on IR imaging technology, this Phase 3a is to continue a collaborative effort between UA and Navy CRANE in year 4 of a 5-year project to produce the first SiGeSn IR focal plane array imaging system. In fact, the outcome of the investment is potentially beyond military applications. SiGeSnPb infrared imaging technology will impact growing national needs such as: (a) robotics, (b) devices that operate in very harsh environments, (c) inspection and metrology, (d) medical imaging and (e) dual commercial-military applications such as, cell phones, microwave photonics, and autonomous vehicles. Moreover, the new CVD and MBE foundries developed in Phase 2 will play the national role in Phase 3a to establish the National Center on #Research to Accelerate the Commercialization and Education for SiGeSnPb# - known as the #RACE# for SiGeSnPb technology, with the broader long-term goal to advancethe science and technological applications of SiGeSnPb semiconductors.The National Center, RACE is composed of (i) the only open SiGeSnPb semiconductorfoundry in the U.S., (ii) a network of SiGeSnPb researchers across the nation invested in developing SiGeSnPb and interested in access to the SiGeSnPb Fab, and (iii) an education program based on #hands-on# in the Fab training on infrared (IR) semiconductor technology. The UA-CRANE collaborative effort in RACE is built on a strong SiGeSn program at the UA and is currently leading the competition around the world on developing and demonstrating SiGeSn as the next generation IR material. This is evidencedby many breakthroughs on the growth, optical, and electrical properties of SiGeSn materials and devices by UA researchers, but alsoby our year 3 breakthroughs in RACE on producing the first organized arrays of ~ 180 nm and 280nm size dislocation free GeSn nanostructures using aspect ratio trapping. Building on these results, our targeted outcome in years 4 and 5 are the first GeSn and SiGeSnfocal plane array IR imaging systems that create the opportunity to realize significant defense and commercial applications. More subtlety, RACE has and will continue to leverage our scientific discoveries to widen the impact even further by giving birth to noveland new technologies. This includes, for example, atomic ordering to synthesize new materials, or aspect ratio trapping, to dramatically improve material quality and create opportunity for new qubits that can enable and accelerate the chase to quantum computing. Further, optimizing the potential impact, at least by the start of Phase 3, year 5, RACE will be in position to provide broad accessto SiGeSnPb semiconductor material to IR researchers throughout the U.S. The hypothesis is that by engaging the entire IR SiGeSnPb community the outcome will be enhanced scientific and technological breakthroughs and their transition into commercial triumphs. RACE is a direct response to strengthen U.S. IR research and imaging technology in the face of stepped-up international competition.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 09, 2024
- Source ID
- N000142412651
Entities
People
- Shui-Qing Yu
Organizations
- Office of Naval Research
- United States Navy
- University of Arkansas System