NICOP - Development of low temperature diamond CVD of high thermal
Abstract
Overall Scientific and Technical Merit Attractive part of this proposal is the low temperature diamond deposition on GaN/GaAs substrates. Two methods will be studied for low temperature ~ 400C diamond deposition – 1) RF CVD and 2) MW CVD process. Also ion implantation process is aimed at growing diamond microchannels on the device is the real strength of this proposal. This will enable both embedded cooling near the device as well as high thermal conductivity heat spreading. CTE mismatch can be reduced by using CrNx interlayer. This improved the adhesion of GaN with diamond and lowers the interfacial stresses. In this proposal the top layer is diamond coated, it would be more effective to see the microchannels in the bottom layer. No coolant has been identified. But unsure is that has been done by other partners. Potential Contribution and Relevance to the DARPA Mission
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2016
- Source ID
- N629091512027
Entities
People
- Alon Hoffman
Organizations
- Office of Naval Research
- United States Navy