NICOP - Growth and characterization of bulk HVPE-GaN. Pathway to highly conductive and semi-insulating GaN substrates of the highest structural quality.
Abstract
Growth and characterization of bulk HVPE-GaN. Pathway to highly conductive and semi-insulating GaN substrates of the highest structure.High quality, low defect GaN material will be a game changer for next generation DoD high power electronics provided reliable devices with low leakage currents and high breakdown voltage can be achieved. While there is ample progress in using GaN for LEDs, this simple can be done by growing crystals from foreign substrates. This method doesn t yield the purity needed for crystals for DoD applications. Instead one needs to developed alternative methods for growing crystals and the best one to explore is the Hybrid Vapor Phase Epitaxy (HVPE) approach. It s a very complex approach involving crystallization at ambient pressure with GaN deposited through the reaction of GaCl with NH4 at temperatures exceeding 1000C. The proposers have substantial experience in these complex methodologies and will attempt to develop a procedure for high growth, defect free crystals. The researchers are one of a very few groups world wide with both the experience and capabilities to undertake this work. This work has been coordinated with Lynn Petersen, Code 33 who will be providing co-funding. Additional the NRL team (Jaime Freitas) are very interested in this work and obtaining and analyzing the samples that emerge from this scientific activity. The desired outcome is that this work be funded, that innovative methods for producing the highest quality GaN are found, the results are analyzed by NRL and lead to the introduction of advanced high power electronic capabilities for Navy systems. This work has the potential to be very important--the Polish researchers are outstanding, interact well with the international community including Japanese Nobel Prize winners. I really think this will be a great effort, probably my best scientific find during my 4 years here. I think this is an important international connection to make.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 04, 2017
- Source ID
- N629091712004
Entities
People
- Micha Bokowski
Organizations
- Institute of High Pressure Physics, Polish Academy of Sciences
- Office of Naval Research
- United States Navy