NICOP - Ion bean assisted deposition of Gallium oxide based films for high power device applications
Abstract
The objective of this work is to understand growth of high quality semi-insulating and doped Ga2O3 films by ion beam assisted deposition (IBAD). Research focus on the IBAD growth of high quality ?- and ?- phase Ga2O3 and related group III-oxide alloys thin films on various substrates such as ?-Ga2O3, SiC, sapphire, GaN, and AlN. The viability of these homo- and heterostructures of Ga2O3 and related group III-oxide alloys as a next generation high power and RF semiconductor materials for future navy needs will be determined.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 04, 2018
- Source ID
- N629091812121
Entities
People
- Fernando Chubaci
Organizations
- Office of Naval Research
- United States Navy
- University of São Paulo