AlGaN/GaN HEMT Devices on 200 mm Engineered Substrates for 5G Applications
Abstract
The overall objective of the activity is to examine on 200 mm QST~ substrates thefundamental steps in epitaxial growth and processing in order to realize GaN transistors andMMICs with excellent device properties for the targeted frequency range. To be best of ourknowledge, this effort will be the first systematic research of heteroepitaxial growth of GaNin the absence of thermal mismatch. The use of (111) oriented Silicon substrates for GaNbasedelectronic devices is very attractive from a commercial point of view as thesesubstrates are significantly less-expensive than SiC substrates, available in large diameterand device fabrication may be done in a CMOS compatible foundry process. However,heteroepitaxy of GaN on Si(111) is quite challenging from a growth science point of view.First of all, the eutectic reaction of Ga and Silicon needs to be avoided, thus requiring AlNseed layers. Second, structural, morphological and electrical properties of the epilayer stackare optimized under the following three boundary conditions:
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 30, 2019
- Source ID
- N629091912126
Entities
People
- Patrick Waltereit
Organizations
- Fraunhofer Society
- Office of Naval Research
- United States Navy