Homoepitaxial Ga2O3 Structures for Power Device Applications
Abstract
Advance the state-of-the-art of ultra-wide bandgap steady-state and pulsed power electronics by developing benchmark device structurAdvance the state-of-the-art of ultra-wide bandgap steady-state and pulsed power electronics by developing benchmark device structures based on high quality homoepitaxial Ga2O3 on native -Ga2O3 substrates. Demonstrate that high quality, large-area Ga2O3 substratees based on high quality homoepitaxial Ga2O3 on native -Ga2O3 substrates. Demonstrate that high quality, large-area Ga2O3 substrates and low-defect density epilayers grown by Novel Crystal Technology are a viable platform for the development of commercial -Ga2O3s and low-defect density epilayers grown by Novel Crystal Technology are a viable platform for the development of commercial -Ga2O3--based high voltage, high power devices. Demonstrate a vertical Ga2O3 power SBD with breakdown voltage of 5-10 kV while maintainingbased high voltage, high power devices. Demonstrate a vertical Ga2O3 power SBD with breakdown voltage of 5-10 kV while maintaining o on resistance Ron below 1 mcm2. Building on this technology, demonstrate a vertical Ga2O3 power transistor with breakdown voltagen resistance Ron below 1 m to cm2. Building on this technology, demonstrate a vertical Ga2O3 power transistor with breakdown voltage limited only by the intrinsic breakdown of the dielectrics in the device. limited only by the intrinsic breakdown of the dielectrics in the device.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2020
- Source ID
- N629092012055
Entities
People
- Akito Kuramata
Organizations
- Novel Crystal Technology, Inc.
- Office of Naval Research
- United States Navy