Radiation effects on wide bandgap semiconductor devices
Abstract
The purpose of this project is to develop GaN-based devices with focus on HEMT to reach thefull potential as defined by the theoretical capabilities of the material. This will be pursued byinvestigation of single event effects under designed radiation conditions to understand thedevice fundamental mechanisms, which connects to the ongoing research work of Dr. AniKhachatrian at ESTD, NRL. Outcome of this joint research project would hopefully initiatenovel concepts and new device architectures to create groundbreaking technology. It will be ofbenefit not only for RF and power electronic systems but also for bio sensors in terms ofefficiency, compactness and cost-efficiency. For example, GaN HEMT-based sensors to detectthe severe acute respiratory syndrome coronavirus (SARS-CoV) have been demonstrated [2-3], which could be explored to detect SARS-CoV2 (Covid-19). Advanced diagnostic andsurveillance technologies to investigate/manage such types of the coronavirus would be usefulin preventing future epidemics.We intend to divide the work in three main phases during the project duration of 3 years. Thefirst phase within 3 months timeline is to clarify the specifications of the GaN devices and getagreement on a joint plan to carry out the work in the following steps. The second phase isdevoted to design, fabrication and characterization of GaN-based devices for radiation tests atNRL under different operation conditions. Further investigations of the impact of radiation ondifferent passivation, packaging concepts and device failure mechanisms for the 2D/3Dintegrated HEMTs will be explored in the final phase of the project.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 05, 2021
- Source ID
- N629092112040
Entities
People
- Qin Wang
Organizations
- Office of Naval Research
- United States Navy