New hardly bonded interface between copper and super-high thermal conductivity bi-layer diamond
Abstract
In this project, the scientific challenge will be to demonstrate that a new hardly bonded interface between copper and super-high thermal conductivity bi-layer diamond (pioneered within our consortium) which is produced by a near-net shape technology, can providesuperior heat transfer in high-power density electronic devices and components. Copper/diamond composites offer (i) high isotropic thermal conductivity, (ii) the possibility to tailor the coefficient of thermal expansion to be close to that of semiconductor chip materials and (iii) high stability at ambient temperature. However, copper/diamond composites suffer from (i) poor chemical affinitybetween copper and diamond, which makes those materials hardly bond together, (ii) the existence of an interface thermal resistant which physical origin is not deeply understood yet, (iii) the lack of near-net shape forming technology. Our novel approach consistsin substituting diamond for bi-layer diamond, which is obtained by the sp2-C to sp3-C conversion of Bernal-stacked bi-layer graphene grown on copper substrate by chemical vapor deposition, using a pressureless (10-100 Torr), low-temperature (50-325 degrees Celsius) hot-filament-assisted hydrogenation process. A strong hybridization between the sp3 dangling bond orbitals and the metallic surface orbitals stabilizes the sp3-bonded carbon layers. This has the potential to enable high thermal conductance at the interface copper/bi-layer diamond. Approved for Public Release.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 21, 2023
- Source ID
- N629092412000
Entities
People
- Fabrice Piazza
Organizations
- Office of Naval Research
- Pontificia Universidad Católica Madre y Maestra
- United States Navy