Electron irradiation hardness of P doped n type films and bipolar diamond structures
Abstract
The motivation for this project is to address the need for semiconductor devices capable of sustained operation in radiation hard environment applications (e.g. spacecraft, nuclear stations). Compared to other semiconductors, diamond stands up as an optimal material for power devices, radiation detectors, and radioisotope batteries used in the above applications. While considerable effort hasbeen devoted to the study of radiation effects in semi insulating and p-type conductivity diamond, the effect of high energy electron irradiation on n-type conductivity diamond films and bipolar (n-type/p-type conductivity) structures is still unknown. The objective of this project is to evaluate the impact of high energy electron irradiation (up to 2 MeV, fluence 1E+15 e/cm^2) on electronic and structural properties of single crystal phosphorous doped diamond films and bipolar structures. An understanding of radiation effects on n-type diamond is a key factor necessary for realizing the full potential of diamond devices for radiation hard environmentapplications. The specific S&T research areas where the outcome of this project is very important are spacecraft technology and naval power systems.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 24, 2024
- Source ID
- N629092412011
Entities
People
- Shinichiro Sato
Organizations
- Office of Naval Research
- United States Navy