Next generation beta Ga2O3 crystals wafers and epitaxy
Abstract
The present proposal focuses on ultra-wide bandgap Ga2O3-based materials and technologies for high-power electronics. Proved achievements and proprietary technologies for growing bulk beta-Ga2O3 and beta-(AlxGa1-x)2O3 crystals by the Czochralski method and epitaxial films by MOVPE at IKZ enable to provide samples, substrates, and epi-layer structures of unique physical properties for a variety of studies, epitaxial growth, and power device fabrication at NRL. Specifically, IKZ aims to grow crystals and prepare wafers frombulk beta-Ga2O3 crystals of high purity using a multi-step approach leading to reduced residual impurity and point defect concentration, which supposedly ensures the electrically insulating state of the material without any compensating dopants. We also aim to provide wafers of beta-Ga2O3:Mg, as well as epi-layer stocks grown on beta-Ga2O3:Mg and beta-(AlxGa1-x)2O3:Mg wafers, which are of high structural quality with no nanovoids. In each of the above cases, the wafers will have (100) orientation with a dedicated offcut (2-6° towards [00-1]) to ensure a step-flow growth mode, high structural quality, and great electrical properties of the films. Further, doping bulk beta-(AlxGa1-x)2O3 crystals with Hf and Sn, as well as Al2O3 with Hf and Si will extend the study of ultra-wide bandgap materials towards doping feasibility and device application. It should be emphasized, that proposed beta-Ga2O3, Mg-doped beta-Ga2O3, and beta-(AlxGa1-x)2O3 ([Al]=20 mol.%) crystals/wafers with the specific surface orientation are not available elsewhere. Also,epitaxial films grown on wafers prepared from Mg-doped beta-Ga2O3 single crystals grown at IKZ ensure a very smooth wafer/film interface (required for delta-doping), high structural quality of the films even when thick (4 microns), as well as great electrical performance. In addition to bulk crystal and film growth, and wafer fabrication, we also aim to carry out basic characterization of theobtained materials.This project addresses the ever-increasing power requirements of Naval systems and the need for compact, efficient onboard power electronics. Research into next-generation ultra-wide bandgap semiconductors is of paramount importance for the Navy. Advances in power device applications of Ga2O3 are expected to offer reduction in energy loss for naval equipment, resulting in improved size, weight, power, and cost (SWaP-C) brought about by realization of a Ga2O3 power electronics technological platform. Theobtained results will constitute a foundation for in-depth fundamental study of physical properties/phenomena, epitaxial growth, power device fabrication, and DFT modeling. The data will be presented at internal meetings, conferences, and journal articles.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Nov 09, 2024
- Source ID
- N629092412105
Entities
People
- Zbigniew Galazka
Organizations
- Forschungsverbund Berlin
- Office of Naval Research
- United States Navy