"SILICON NITRIDE/III-V PHOTONIC INTEGRATION TECHNOLOGY AND HIGH-COHERENCE CONCEPT SEMICONDUCTOR LASER"
Abstract
The scope of this effort is to demonstrate a concept of electrically-pumped SiN/III-V semiconductor laser, capable of exceptionally high coherence and power scalability and to demonstrate a viable foundry-enabled processing and integration of SiN with III-V semiconductors for both passive and active devices. The benefit derived from this research if successful is the capability to not only maintain technological superiority and meet the challenges of an increasingly info-centric battlefield through creative utilization of the electromagnetic (EM) spectrum, but also to support high-capacity coherent digital optical networks and high-performance data processing for computing. The growth of internet and computing power is predicted to be a major source of economic growth, making this effort a clear benefit to the public.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 25, 2019
- Source ID
- N660011914008
Entities
People
- Amnon Yariv
Organizations
- California Institute of Technology
- Defense Advanced Research Projects Agency
- Naval Information Warfare Center Pacific