Resilient Epitaxial Gate Oxides for High Performing Wide Band Gap Semiconductor Devices
Abstract
This effort will develop a process to prepare an epitaxial, scalable, and high purity dielectric (Mg,Ca)O, that is compatible with the most widely used hexagonal wide band gap semiconductors. If successful, the research will result in resilient epitaxial gate oxides for high performing wide band gap semiconductor devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 16, 2020
- Source ID
- N660012014045
Entities
People
- John Ihlefeld
Organizations
- Defense Advanced Research Projects Agency
- Naval Information Warfare Center Pacific
- University of Virginia