Ultra-Wide Bandgap Material and RF Device Technology
Abstract
The scope of Ultra-Wide Bandgap Material and RF Device Technology is to fabricate and test a new vertical radio frequency (RF) field effect transistor (FET) using a combination of Gallium Nitride (GaN) and Gallium Oxide (Ga2O3) materials
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 06, 2022
- Source ID
- N660012214032
Entities
People
- Elaheh Ahmadi
Organizations
- Board of Regents of the University of Michigan
- Defense Advanced Research Projects Agency
- Naval Information Warfare Center Pacific