UV/Vis Microcombs based on electrochemically-sliced AlGaN thin films

Abstract

Yale and the University of Central Florida will jointly develop microcomb sensors based on high quality III-V nitride materials. III-V Nitrides are recognized as the most important semiconductor after silicon for their wide use as light emitters in the visible-ultraviolet range. However, their use as optical microresonators has been largely unexplored despite of their favorable optical properties for generating broadband frequency combs. The major challenge lies how to separate high quality films from their defective growth buffer. Yale team proposes to use an electro-chemical slicing process to produce high quality AlGaN membranes and transfer them to a highly transparent substrates such as sapphire. Micro-ring resonators patterned from the transferred membranes should have very low loss in the UV-Vis band due to the large bandgap of AlGaN. By varying the microresonator’s geometry and its material composition, anomalous dispersion can be achieved to produce visible Kerr frequency combs. The spectroscopic goal of this project is to adapt the AlGaN UV-Vis microcomb in a laser-induced-breakdown spectroscopy system for fingerprinting airborne bioaerosols

Document Details

Document Type
DoD Grant Award
Publication Date
Apr 20, 2016
Source ID
W31P4Q1510006

Entities

People

  • Ai-Hong Tang

Organizations

  • Army Contracting Command
  • Defense Advanced Research Projects Agency
  • Yale University

Tags

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene