Advanced III-N UV Diode Lasers Operating at 369nm with Narrow Line Width Emission
Abstract
This program explores the growth by metalorganic chemical vapor deposition (MOCVD) and the properties of semiconductor materials and device structures for deep-ultraviolet (DUV) solar-blind (SB) avalanche photodiodes (APDs) capable of Geiger-mode (GM) operation in the wavelength range 250nm < . < 380nm and fabricated in the wide-bandgap AlInGaN materials system. We are exploring many fundamental aspects related to the realization of optimized III-N DUV GM-SB-APDs. Critical evaluations will be made regarding the optimal growth conditions, interface structures, heterojunction properties, doping characteristics, materials compositions, device structures and designs, and device processing technologies for back-side illuminated APDs for flip-chip photodiode array applications. We have structured two Tasks in this program: Task 1: Exploration of optimized MOCVD growth conditions for III-N DUV APD heterostructures ; Task 2: Exploration of the impact of device design and processing of APD through comparative performance evaluation. We will employ both sapphire and native III-N substrates and develop novel device processing technologies to achieve low dark currents and high sensitivity in the UV under GM operation.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 30, 2017
- Source ID
- W911NF1510026
Entities
People
- Russell D. Dupuis
Organizations
- Army Contracting Command
- Georgia Tech Research Corporation
- Office of the Secretary of Defense