International Conference on Silicon Carbide and Related Materials (ICSCRM2015)
Abstract
The 16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015) was held in Giardini Naxos, Sicily (Italy), from October 4th to October 9th, 2015. The conference provided a scientific forum on the wide bandgap semiconductor silicon carbide (SiC) for 642 participants from 28 countries. During the conference, 357 works have been presented: 24 invited, 98 oral and 235 posters. These presentations covered most of the current research activities running on the wide bandgap semiconductor silicon carbide SiC and related materials (such as graphene and GaN), from fundamental material issues to power electronics applications. The main scientific issues that have been discussed in the ICSCRM2015 were the fo llowing: ¥ Progresses in SiC MOS-interface technology and unipolar devices for high voltage applications ¥ Threshold voltage instability mechanisms in SiC MOSFETs ¥ Improvement of the channel mobility by alkali earth interface passivation ¥ Alternative methods to multi-energy implants by the use of membranes ¥ P-type doping ofSiC epi-layers and 3C-SiC hetero-epitaxy ¥ Defects engineering in SiC to fabricate quantum devices ¥ Applications of graphene grown on SiC (like sensors and MEMS) ¥Physics and technology for normally-offGaN HEMTs The scientific contributions presented during the conference have been published on the volume 858 of Material Science Forum (http://www.scientific.net/MSF.858). This special issue contains 275 papers (17 of them correspond to invited contributions). The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1510165
Entities
People
- Febrizio Roccaforte
Organizations
- Army Contracting Command
- Consiglio Nazionale delle Ricerche
- United States Army