Electrically Injected 280 nm AlGaN Nanowire Lasers on Silicon
Abstract
The major goals are to develop, for the first time, electrically injected semiconductor lasers operating at 280 nm by using dislocation-free AlGaN nanowire arrays formed on Si substrate. The design, growth, fabrication, and testing of both nanowire random and edge emitting lasers will be studied, with the objective to achieve 280 nm lasers with ultralow threshold (<500 A/cm2) and high output power (> 1 W).
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 11, 2018
- Source ID
- W911NF1510168
Entities
People
- Zetian Mi
Organizations
- Army Contracting Command
- McGill University
- United States Army