Orbitally Matched Electronic Devices Based on Graphene Nanoribbons
Abstract
The contractor will create a new approach to realizing a low-voltage, high-speed logic switch that retains the basic characteristics of an insulated gate field-effect transistor. The targeted device incorporates several essential innovations that distinguish it from all previously proposed post-CMOS devices, promises to enable circuits and systems that realize the benefits of rejuvenated MooreÕs law scaling for several generations. Four tasks are planned: Task 1 Device Design and Modeling: Calibration of GNR-based OME-FET models and simulation of experimental OME-diodes using state-of-the-art non-equilibrium GreenÕs function techniques. Task 2 Molecular Synthesis: Molecular precursor library for assembling GNR heterostructures with different widths and edge-doping schemes, as well as single-junction GNR heterostructures for OME-diode implementation. Task 3 Atomic-scale Characterization: Tested strategy for assembling functional single-junction bi-segmented GNR heterojunctions with proper electronic structure for implementing OME-diode device. Task 4 Device Fabrication/Testing: Functional bottom-up synthesized GNR-based OME-diode devices utilizing two covalently joined GNR segments with different widths and doping type. Electrical characterization data for OME-diodes including contact resistance, and transmission probability (on-current) at low bias voltages in the 0.2-0.3 V range.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1510237
Entities
People
- Michael F. Crommie
Organizations
- Army Contracting Command
- Defense Advanced Research Projects Agency
- University of California, Berkeley