Advanced Optical and Electrical Characterization System for SiGeSn Materials and Devices
Abstract
The Defense University Research Instrumentation Program (DURIP) is designed to improve the capabilities of U.S. Universities to conduct research and to educate scientists and engineers in selected technical areas of importance to national defense. DURIP funding provides for the acquisition of research equipment and instrumentation for this purpose. The requested funds from ARO will be used to build an advanced photoluminescence (PL) and electroluminescence (EL) measurement system to allow for systemic characterizations of GeSn and SiGeSn materi.al and optoelectronic devices. For PL measurement, with the high pumping power, low temperature operation down to I 0 K, and long wavelength emission detectability covering 2-5 µm, advanced material optical properties such as carrier lifetime and band alignment could be studied, which provides essential guidance for material growth and device design. The high power continuous wave pumping will provide an easy way to study the GeSn micro-disk laser mode behavior. For EL, the objective is to use the system to conduct temperature-dependent study oflight-emitting devices, such as light-emitting diodes (LEDs) and laser diodes (LDs) particularly under high injection using the proposed the high power pulsed current source. This will lead to the demonstration of the first electrically injected GeSn based laser. With the new mid-IR detector compatible to both PL and EL measurement, the light detection range will be extended to 3-5 µm range to meet the need of material and device characterization when Sn incorporation into Ge is increased with a bandgap narrower than 0.4 eV. The system will be used to support ongoing DARP Al ARO, AFOSR, and Air Focre SBIR projects to develop Si Ge Sn high performance optoelectronics devices on Si substrates such as emitters and detectors. Other than Group IV photonics, the systems will also serve as a general purpose user facility in PI s group to support other research efforts, for example, the onging GaAsBi project and other existing strong III-V material and device research program in UA. In addition to the significant research and technological accomplishments, this project provides graduate and undergraduate training in semiconductor material and device characterizations and development of new infrared materials. The success of this project will undoubtedly lead to opportunities for commercialization of the technical innovations.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1510365
Entities
People
- Shui-qing (fisher) Yu
Organizations
- Army Contracting Command
- United States Army
- University of Arkansas