Optical and Electrical Properties of NiFe-oxide Thin Films
Abstract
We propose fundamental research to understand electric transport in doped permalloy-oxide (PyO) thin films for application in radiation hard, low energy, high speed logic and resistive memory devices. Low energy, radiation hard electronics are important to our military forces to facilitate mobile reliable control and communication on the battle field. Existing CMOS logic and memory, such as Flash, SRAM and DRAM, although reliable in commercial applications fail or loose information when exposed to significant gamma radiation. Memory devices that are not based on charge storage but magnetic state, phase, or resistance state are in general less sensitive for high energy photons and particles. Resistive Random Access Memory (ReRAM) was first proposed in 1964 and is based on a soft breakdown in a dielectric thin film. The resistance of the dielectric thin film can be changed reversible between a high resistance and low resistance states and used to store information. The reading writing process is fast, comparable with conventional RAM, the memory is non-volatile, the integration density is potential larger than Flash, and the devices are radiation hard. ReRAM devices are virtually insensitive to ionization radiation and the active film thickness is thin enough to make them also insensitive to lattice displacement radiation.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 12, 2016
- Source ID
- W911NF1510394
Entities
People
- Wilhelmus Geerts
Organizations
- Army Contracting Command
- Office of the Secretary of Defense
- Texas State University