STIR: Rapid Identification of Optimal Dopants for Silicon Based Broadband Infrared Detectors via Quantum Mechanical Simulation
Abstract
Perform a theoretical investigation to understand the electronic structure, subband gap photoresponse, and charge transfer properties of "hyperdoped" silicon. One question to be answered is, "can good photoresponse be obtained beyond the bandgap in silicon?" Density Functional Theory (DFT ) will be used to determine defect structures and energies and to calculate the light absorption for a given defect composition in hyperdoped silicon. Hyperdoping refers to dopant concentrations typically exceeding the solid solubility limit by several orders of magnitude and generally creates intermediate band defect states inside the traditional bandgap. They will follow two design rules for the selected dopants: DR1 - Deep levels are preferred over shallow states. This is to prevent the intermediate band from broadening into the valence band or conduction band. DR2 - The intermediate band that forms should be half-filled. This is to produce maximum light absorption with the participation of the intermediate band. Gold will be studied first as it satifies the design rules and builds on some previous theoretical work. It also can be compared with experimental work at ARDEC Benet Labs and the University of Dayton.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1510452
Entities
People
- Elif Ertekin
Organizations
- Army Contracting Command
- United States Army
- University of Illinois Urbana–Champaign