Nucleation, Growth, and Transformation of Novel 2D Layered Materials
Abstract
The objective of this proposal is to establish the impact of substrate properties (crystallographic orientation, surface chemistry etc.) on nucleation and growth of two-dimensional (2D) semiconducting materials. The PI proposes to use insulating substrates with a wide range of grain orientations within a single wafer to investigate the crystal orientation impact on the nucleation of two-dimensional (2D) semiconducting material- GaSe with a bandgap of 2 ev. Electron backscatter diffraction (EBSD) will be used to identify and correlate 2D- GaSe nucleation sites with grain orientations. Micro x-ray photoelectron spectroscopy will also be used to map the surface chemistry to provide an insight on the influence of surface functionalization on nucleation process. Photonic and structural properties of the 2D layers processed in the study will be investigated using near field scanning optical microscopy (NSOM), photoluminescence and Raman spectroscopy etc.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1510488
Entities
People
- Joshua A. Robinson
Organizations
- Army Contracting Command
- Pennsylvania State University
- United States Army