Fundamental Studies of Growth and Processing of III-N-based deep UV solar-blind back-side-illuminated Separate Absorption and Multiplcation
Abstract
This program will explore the growth and properties of materials and device structures for deep-ultraviolet (DUV) solar-blind (SB) avalanche photodiodes (APDs) capable of Geiger-mode (GM) operation and fabricated in the wide-bandgap AlInGaN materials system. The research program will explore many fundamental aspects related to the realization of optimized III-N DUV GM-SB-APDs. Critical evaluations will be made regarding the optimal growth conditions, interface structures, heterojunction properties, doping characteristics, materials compositions, device structures and designs, and device processing technologies for back-side illuminated APDs for flip-chip photodiode array applications
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 08, 2019
- Source ID
- W911NF1510489
Entities
People
- Russell D. Dupuis
Organizations
- Army Contracting Command
- Georgia Tech Research Corporation
- United States Army