Ballistic Phosphorene Transistor
Abstract
The proposed research will investigate the fundamental electrical and transport properties of phosphorene and explore these unique properties for novel phosphorene based device concepts such as ballistic transistors with superior performance over Si and III-V based devices. The proposed research will carry out the following work plan: 1. Exploration of anisotropic transport properties and ballistic transistors of exfoliated phosphorene at sub-50nm gate length; 2. Surface passivation, interface characterization, and hetero-integration of2D materials such as graphene, h-BN with phosphorene; 3. Controllable doping technique and liquid ion gating technique to explore Stark effect on phosphorene; 4. Exploration of ballistic phosphorene transistors with exotic electronic states such as anisotropic Dirac Fermions transport; 5. Optimization of the ballistic transistors fabrication, channel quality, contacts, to realize sub-20 nm phosphorene FET with unprecedented performance; 6. Optimization of the ballistic transistors fabrication, channel quality, contacts, to realize sub-10 nm phosphorene FET with unprecedented performance.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1510574
Entities
People
- Peide Ye
Organizations
- Army Contracting Command
- United States Army
- University of Virginia