Quantum Control and Engineering Defects in Boron Nitride
Abstract
Counterintuitively, atom-scale defects in semiconductors are promising building blocks for quan tum technologies. Analogous to trapped molecules, defects harbor quantum spin states that can be optically addressed, and they can maintain coherence even at room temperature and above. Potential applications include the development of quantum computers, quantum repeaters, and nanoscale quantum sensors for physics, materials science, chemistry, and biology. The main defect spin studied to date is the nitrogen-vacancy (NV) center in diamond, although analogous systems have recently been discovered in other wide-bandgap semiconductors. In this effort, we aim to develop a new class of defect spins that exploit a further key materials propertyÑreduced dimensionality. Low-dimensional materials exhibit novel physical effects unseen in their bulk counterparts, and we anticipate that native defects in low-dimensional materials will show similarly unique features. We will investigate two-dimensional (2-D) materials, where the defects all lie in the same atomic plane, and all at the surface, offering unprecedented potential to engineer novel quantum functionality with defects, e.g., for sensors or optoelectronic devices. Specifically, we will study monolayer hexagonal boron nitride (h-BN), which in many respects is the 2-D analog of diamond. Its large band gap, small spin orbit coupling, and high Debye temperature are all desirable host properties for defect spins, and it can be layered with other 2-D materials to exploit their varied features for optical/electrical/mechanical devices. For biochemical applications, h-BN defects could be exquisitely sensitive to individual molecules adsorbed on the surface, or intercalated between layers. We will employ optical spectroscopy techniques, first-principles theoretical calculations, and materials engineering to identify the optical signatures of native defects in h-BN and characterize their electronic structure. Ultimately, we will develop quantum control protocols to address spin of h-BN defects. This project represents an initial foray into defect quantum engineering in reduced dimensions, and we forsee wide-ranging applications for optically addressable spins in h-BN, with potential impact spanning materials science, physics, biology, and engineering.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 04, 2019
- Source ID
- W911NF1510589
Entities
People
- Lee C Bassett
Organizations
- Army Contracting Command
- United States Army
- University of Pennsylvania