Integrated Magnetoelectic Devices
Abstract
The objective of this research is to optimize the growth of single phase magnetoelectric hexafenite films on silicon substrates and demonstrate their use in a new generation of voltage tunable devices including: (i) Variable MHz inductors, (ii) Voltage-controlled MHz Amplifiers. (iii) Voltage-controlled Ferrite GHz Planar Microwave devices and (iv) GHz magnetic-field sensors. The research will seek to exploit a new class of single-phase magnetoelectric materials that have been discovered to possess a large magnetoelectric linear coupling at room temperature, comparable to the most efficient multi-ferroic composites. The new class of MB fenites is identified as hexaferrites of the M, Y. and Z-types. The unique feature of these hexaferites is that the unit cell consists of stacked spinel blocks of TMFe2O4, BaFe4O7 and 2BaFe4O7 blocks. Substitution of various transition metal ions into the TM position in combination with Sr or Pb substitution for the Ba ions in these systems can lead to strains that alter the spin configuration and polarization moment of the crystal structure producing strong magnetoelectric coupling. In this study films will be deposited onto Si substrates by pulsed laser deposition using an ITO or AZO buffer layer. Base compositions of interest will be: M-type hexaferrite BaFe12019, Y-type Ba2Fe12TM2O22 and Z.type Ba3Fe24TM2O41. Tho phase one goal is to identify compositions and growth conditions that lead to .the largest magnetoelectric coupling coefficients. Once the film growth has been perfected, then voltage tunable devices will be designed and fabricated.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1610011
Entities
People
- Carmine Vittoria
Organizations
- Army Contracting Command
- Northeastern University
- Office of the Secretary of Defense