Research Area 4: Electronics: Mott transistor: Fundamental studies and device operation mechanisms
Abstract
The proposed research will perform fundamental research to understand operational principles and device characteristics of Mott transistors that could potentially impact high speed, low power electronics. Mott insulators in thin film structures will be investigated. Transistor device test structures based on these materials will be fabricated by lithography and characterized and carrier transport studies will be performed. The following work plan will be carried out: (1) Synthesis of high quality Mott materials in ultra-thin film form and transistor gate stack fabrication (2) Fabrication of gated field effect switches (3) Field effect characteristics in transistor devices to understand fundamental properties of Mott transistors, electronic transport mechanisms will be studied by variable temperature measurements and in presence of magnetic fields
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1610289
Entities
People
- Shriram Ramanathan
Organizations
- Army Contracting Command
- United States Army
- University of Virginia