Research Area 11.1 ARO STIR Program: The Chaotic Quantum Oscillator
Abstract
We analyze the sequential resonant tunneling model of electron transport in weakly coupled, n-doped semiconductor superlattices under a DC voltage bias. From the Poincare map, we illustrate the bifurcations of the electronic dynamics as the bias voltage is smoothly varied. We also vary the number of periods making up the superlattice, as well as the strength of (time-independent) random perturbations in the widths of the wells and barriers and (time-dependent) noise in the bias voltage and tunneling rates. We find supercritical Hopf bifurcations, perioddoubling bifurcations, and period-doubling cascades, all of which are robust against the additional perturbations. These bifurcations have been predicted for single assymetric quantum wells at terahertz frequencies, but in superlattices, these bifurcations occur at gigahertz frequencies and are easier to measure.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Dec 04, 2018
- Source ID
- W911NF1610303
Entities
People
- Bjorn Birnir
Organizations
- Army Contracting Command
- United States Army
- University of California, Santa Barbara