Epitaxial superconductor-semiconductor two-dimensional systems: a new platform for quan- tum computation
Abstract
The overall objective of the proposed research is to investigate the fundamental structural and electronic properties of epitaxially grown superconductor - III-V semiconductor interfaces applicable for use in the exploration of topological states and qubits. Specific objectives include exploring the existence of an epitaxy relation and domain matching between two-dimensional In(Ga)As (semiconductor) and Al, TiN (superconductor), investigating superconducting materials with large kinetic inductances to fabricate gate-controlled Josephson junctions, and, along with a collaborator, investigation of quantum devices fabricated with the examined epitaxy techniques to link interface properties of the devices with basic qubit properties such as coherence times. The proposed research will take a systematic physics and materials science based approach to study the epitaxial growth of semiconductor-superconductor interfaces. The epitaxial growth mechanisms of several superconducting materials including Al, Nb and TiN on zinc-blend III-IV semiconductors, particularly InAs will be explored. Ultimately the interface propertiesÕ correlation with qubit parameters will be determined through transport and microwave measurements on various superconductor-semiconductor and superconductor-semiconductor-superconductor devices. Work at CCNY will focus on fabrication, and the qubit characterization will most likely be handled in large part by a collaboration with leading groups capable of performing qubit control and measurements.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2017
- Source ID
- W911NF1610371
Entities
People
- Javad Shabani
Organizations
- Army Contracting Command
- City University of New York
- United States Army