Doping of Diamond beyond Thermodynamic Solubility Limit for Electronic Applications
Abstract
The objective of the proposed research is to develop a novel approach to create n- and p-type doped diamond through laser melting and quenching of carbon and utilizing the phenomenon of solute trapping. In the proposed approach, carbon thin films are deposited on a substrate such as sapphire, silicon, glass and even heat-sensitive polymer substrate. N-type (N, P, As) and p-type (B) dopants are incorporated into carbon during carbon thin film deposition or subsequently ion implantation. Carbon is then converted into diamond through high-power laser irradiation and quenching. Dopant impurities are incorporated into electrically active substitutional sites in diamonds during liquid-phase crystallization via the phenomenon of solute trapping. These diamond films will be characterized by high resolution scanning electron microscopy, electron energy loss spectroscopy, electron backscattered diffraction (EBSD) with characteristic diamond Kikuchi patterns, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), photoluminescence and Raman spectroscopy, and results correlated with electrical properties.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 18, 2017
- Source ID
- W911NF1610375
Entities
People
- Jagdish Narayan
Organizations
- Army Contracting Command
- North Carolina State University
- United States Army