International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE)
Abstract
Provide an international forum for stimulation and envisioning of ideas, concepts and approaches for advancing the state-of-the-art of of metalorganic vapor-phase epitaxy (MOVPE) growth technologies. Assemble experts from academia, industry, and national laboratories to present their latest progress and exchange ideas in the fundamental and applied aspects of metalorganic vapor-phase epitaxy (MOVPE) growth technologies as well as related device advances. The conference will be held in San Diego CA during July 10-15, 2016. Topics to be discussed include the following: ¥ Fundamental Studies and Modeling of Epitaxial Processes ¥ Wide-Bandgap Group-III Nitride Materials and Devices (AlN, GaN, InN, BN, etc.) ¥ III-V Semiconductors and Devices (Arsenides, Phosphides, Antimonides and Dilute Nitrides) ¥ Narrow Bandgap Materials and Devices (InAs, Antimonides, Bismides) ¥ II-VI Materials and Devices (CdTe, ZnO, ZnSe, ZnS, MCT, etc.) ¥ Semiconducting Oxides and Epitaxial Dielectrics (TCO, Ga2O3, SnO2, etc.) ¥ Epitaxy of 2D Materials and van der Waal Heterostructures ¥ Heteroepitaxy of Mismatched Alloys and III-VÕs on Si ¥ Growth of Nanowires, Nanostructures and Low-dimensional Structures (Dots, Wires and Quantum Wells) ¥ Patterned Growth and Selective Area Epitaxy ¥ Atomic Layer Deposition and Epitaxy ¥ Pseudo-substrates and Epitaxial Lift-off Processes ¥ In Situ Monitoring, Process Control and Reactor Modeling ¥ In-situ Etching ¥ Nano-scale Characterization and Other Techniques ¥ Point Defects and Doping ¥ Growth for Energy Technology (Solid State Lighting, PV, Thermoelectrics, etc.) ¥ Equipment, Safety, Environmental and Production Issues
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 12, 2017
- Source ID
- W911NF1610380
Entities
People
- Russell D. Dupuis
Organizations
- Army Contracting Command
- Materials Research Society
- United States Army