Robust Light State and Transport by Quantum Phase Transition in Non-Hermitian Photonic Materials

Abstract

The objective of this project is to investigate fundamental phase transition properties of non-Hermitian photonic materials with the foundation in quantum mechanics and mathematical physics, considering both non-Hermitian and topological symmetries, for unprecedented robust light manipulation. The major goal in this reporting period of the project is to focus on the demonstration of the non-Hermitian interface light state on the III-V semiconductor platform and investigate its robustness against on-site defects or perturbations. In this project periods, the project was conducted with a focus on Thrusts II and IV as laid out in the original proposal: Thrust II: Until now, a majority of experimentally and theoretically studied non-Hermitian photonic materials were based on single-phase photonic structures, in either symmetric or broken PT, but not on both. In other words, the unique genus of quantum phase invariant with respect to phase transitions has not been effectively utilized and explored. In this period, we have further developed the theoretical model of the non-Hermitian light state we developed in the past. With the new model, we can conveniently predict the condition for the non-Hermitian light state and better understand how the interface state emerges as a function of non-Hermiticity. Thrust IV: Active systems provide a more general framework where different fundamental symmetry paradigms, such as those arising from non-Hermiticity and nonlinear interaction, can generate a new landscape for topological physics and its applications. By exploiting the III-V semiconductor platform, the coupling between active non-Hermiticity and topological protection is enabled, leading to ultrastable lasing radiation with a high amplification rate and elimination of undesired mode hopping. The robustness of the laser emission can also be experimentally studied.

Document Details

Document Type
DoD Grant Award
Publication Date
Dec 04, 2018
Source ID
W911NF1610403

Entities

People

  • Liang Feng

Organizations

  • Army Contracting Command
  • United States Army
  • University at Buffalo

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing